ds30160 rev. 8 - 2 1 of 4 mmdt4126 www.diodes.com diodes incorporated epitaxial planar die construction complementary npn type available (mmdt4124) ideal for medium power amplification and switching ultra-small surface mount package lead free/rohs compliant (note 3) features maximum ratings @ t a = 25 c unless otherwise specified a m j l d b c h k g f c 1 b 2 e 2 e 1 b 1 c 2 mechanical data mmdt4126 dual pnp small signal surface mount transistor characteristic symbol mmdt4126 unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -4.0 v collector current - continuous (note 1) i c -200 ma power dissipation (note 1, 2) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 k/w operating and storage and temperature range t j ,t stg -55 to +150 c e 2 b 2 e 1 c 2 b 1 c 1 notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad l ayout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. maximum combined dissipation. 3. no purposefully added lead. sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm case: sot-363 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: solderable per mil-std-202, method 208 lead free plating (matte tin finish annealed over alloy 42 leadframe). terminal connections: see diagram marking (see page 2): k2b ordering & date code information: see page 2 weight: 0.006 grams (approximate)
ds30160 rev. 8 - 2 2 of 4 mmdt4126 www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo -25 v i c = -10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -25 v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo -4.0 v i e = -10 a, i c = 0 collector cutoff current i cbo -50 na v cb = -20v, i e = 0v emitter cutoff current i ebo -50 na v eb = -3.0v, i c = 0v on characteristics (note 4) dc current gain h fe 120 60 360 i c = -2.0ma, v ce = -1.0v i c = -50ma, v ce = -1.0v collector-emitter saturation voltage v ce(sat) -0.40 v i c = -50ma, i b = -5.0ma base-emitter saturation voltage v be(sat) -0.95 v i c = -50ma, i b = -5.0ma small signal characteristics output capacitance c obo 4.5 pf v cb = -5.0v, f = 1.0mhz, i e = 0 input capacitance c ibo 10 pf v eb = -0.5v, f = 1.0mhz, i c = 0 small signal current gain h fe 120 480 v ce = -1.0v, i c = -2.0ma, f = 1.0khz current gain-bandwidth product f t 250 mhz v ce = -20v, i c = -10ma, f = 100mhz noise figure nf 4.0 db v ce = -5.0v, i c = -100 a, r s = 1.0k f = 1.0khz ordering information (note 5) device packaging shipping MMDT4126-7-F sot-363 3000/tape & reel notes: 4. short duration test pulse used to minimize self-heating effect. 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information k2b k2b ym ym k2b = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw
ds30160 rev. 8 - 2 3 of 4 mmdt4126 www.diodes.com 0.5 0.6 0.7 0.8 0.9 1 . 0 1 10 100 v , base-emitter (v) saturation voltage be(sat) i , collector current (ma) fig. 5, typical base-emitter saturation volta g e vs. collector current c i c i b =10 0.01 0.1 10 1 1 10 100 1000 v , collector-emitter (v) saturation voltage ce(sat) i , collector current (ma) fig. 4, typical collector-emitter saturation voltage vs. collector current c i c i b =10 1 10 1000 100 0.1 1 10 1000 100 h , dc current gain fe i , collector current (ma) fig. 3, typical dc current gain vs collector current c t = -25c a t = +25c a t = 125c a v=1.0v ce 1 100 10 0.1 1 10 100 c , input capacitance (pf) c , output capacitance (pf) ibo obo v , collector-base voltage (v) fig. 2, input and output capacitance vs. collector-base volta g e cb f=1mhz cibo cobo 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) fig. 1, max power dissipation vs ambient tem p erature a 150 200 250 300 350 0
ds30160 rev. 8 - 2 4 of 4 mmdt4126 www.diodes.com important notice life support www.diodes.com diodes, inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance- ments, improvements, or other changes. diodes, inc. does not assume any liability arising out of the application or use of any product described herei n; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. the products located on our website at are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of diodes incorporated.
|
